advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 75v lower on-resistance r ds(on) 8m fast switching characteristic i d 80a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a 40 /w data and specifications subject to change without notice operating junction temperature range -55 to 150 201307101 thermal data parameter 1 maximum thermal resistance, junction-ambient (pcb mount) 4 continuous drain current, v gs @ 10v 50.8 pulsed drain current 1 300 storage temperature range total power dissipation 104 -55 to 150 total power dissipation 4 3.12 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 80 parameter rating drain-source voltage 75 ap94t07gs-hf halogen-free product g d s a p94t07 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for high current application due to the lo w connection resistance. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 75 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 8 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =40a - 60 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =40a - 60 96 nc q gs gate-source charge v ds =60v - 11 - nc q gd gate-drain ("miller") charge v gs =10v - 34 - nc t d(on) turn-on delay time v ds =40v - 19 - ns t r rise time i d =40a - 100 - ns t d(off) turn-off delay time r g =1 -24- ns t f fall time v gs =10v - 13 - ns c iss input capacitance v gs =0v - 2375 3800 pf c oss output capacitance v ds =25v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 250 - pf r g gate resistance f=1.0mhz - 1.3 2.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0 v , - 40 - ns q rr reverse recovery charge di/dt=100a/s - 60 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 80a. 4.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap94t07gs-hf
a p94t07gs-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =6.0v 0 50 100 150 200 250 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =250ua i d =250ua
ap94t07gs-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 1 10 100 1000 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =60v 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
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